BFG591 Datasheet, PDF (6/12 Pages) NXP Semiconductors – NPN 7 GHz wideband transistor

Philips Semiconductors
NPN 7 GHz wideband transistor
Product specification
BFG591
25
handbook, halfpage
gain
(dB)
20
15
10
5
0
0
40
MGC795
Gmax
GUM
80
120
IC (mA)
f = 900 MHz; V_CE = 12 V.
Fig.6 Gain as a function of collector current;
typical values.
10
handbook, halfpage
gain
(dB)
8
6
4
2
0
0
40
MGC794
Gmax
GUM
80
120
IC (mA)
f = 2 GHz; V_CE = 12 V.
Fig.7 Gain as a function of collector current;
typical values.
50
hand_gbo_ao_ink, halfpage
(dB)
40 ^{G UM}
MSG
30
20
10
0
10
10²
MGC796
G _max
10³
10⁴
f (MHz)
I_C = 70 mA; V_CE = 12 V.
Fig.8 Gain as a function of frequency;
typical values.
1995 Sep 04
6