BFG540W Datasheet, PDF (7/16 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG540W
BFG540W/X; BFG540W/XR
handbook^−,²h⁰alfpage
dim
(dB)
−30
MEA973
−40
−50
−60
−70
10
20
30
40
50
60
IC (mA)
V_o = 500 mV; f_{(p + q − r)} = 793.25 MHz; V_CE = 8 V; T_amb = 25 °C;
R_L = 75 Ω.
Fig.11 Intermodulation distortion as a function
of collector current; typical values.
handbook^−,²h⁰alfpage
d2
(dB)
−30
MEA972
−40
−50
−60
−70
10
20
30
40
50
60
IC (mA)
V_o = 275 mV; f_{(p + q)} = 810 MHz; V_CE = 8 V; T_amb = 25 °C; R_L = 75 Ω.
Fig.12 Second order intermodulation distortion as a
function of collector current; typical values.
4
handbook, halfpage
F
(dB)
3
f = 2000 MHz
2
1000 MHz
900 MHz
1
500 MHz
MLC049
0
1
10
IC (mA)
10²
handbook, h⁵alfpage
Fmin
(dB)
4
3
2000 MHz
2
1000 MHz
900 MHz
1
500 MHz
0
1
Gass
MRA760
20
Gass
f = 900 MHz _(dB)
15
1000 MHz
2000 MHz ₁₀
5
Fmin
0
10
IC (mA)
−5
10²
V_CE = 8 V.
Fig.13 Minimum noise figure as a function of
collector current; typical values.
1997 Dec 04
V_CE = 8 V.
Fig.14 Associated available gain as a function of
collector current; typical values.
7