BFG540W Datasheet, PDF (4/16 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG540W
BFG540W/X; BFG540W/XR
CHARACTERISTICS
T_j = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
V_(BR)CBO
V_(BR)CES
V_(BR)EBO
I_CBO
h_FE
f_T
collector-base breakdown
voltage
collector-emitter breakdown
voltage
emitter-base breakdown
voltage
collector cut-off current
DC current gain
transition frequency
C_c
collector capacitance
C_e
emitter capacitance
C_re
feedback capacitance
G_UM
maximum unilateral power
gain; note 1
|s₂₁|²
F
insertion power gain
noise figure
P_L1
output power at 1 dB gain
compression
ITO
third order intercept point
V_o
output voltage
d₂
second order intermodulation
distortion
CONDITIONS
open emitter; I_C = 10 µA ; I_E = 0
MIN. TYP. MAX. UNIT
20
−
−
V
R_BE = 0; I_C = 40 µA
15
−
−
V
open collector; I_E = 100 µA; I_C = 0 2.5
−
−
V
open emitter; V_CB = 8 V; I_E = 0
−
I_C = 40 mA; V_CE = 8 V
60
I_C = 40 mA; V_CE = 8 V; f = 1 GHz; −
T_amb = 25 °C
I_E = i_e = 0; V_CB = 8 V; f = 1 MHz
−
I_C = i_c = 0; V_EB = 0.5 V; f = 1 MHz −
I_C = 0; V_CB = 8 V; f = 1 MHz
−
I_C = 40 mA; V_CE = 8 V; f = 900 MHz; −
T_amb = 25 °C
I_C = 40 mA; V_CE = 8 V; f = 2 GHz; −
T_amb = 25 °C
I_C = 40 mA; V_CE = 8 V; f = 900 MHz; 14
T_amb = 25 °C
Γ_s = Γ_opt; I_C = 10 mA; V_CE = 8 V;
−
f = 900 MHz
Γ_s = Γ_opt; I_C = 40 mA; V_CE = 8 V;
−
f = 900 MHz
Γ_s = Γ_opt; I_C = 10 mA; V_CE = 8 V;
−
f = 2 GHz
I_C = 40 mA; V_CE = 8 V; f = 900 MHz; −
R_L = 50 Ω; T_amb = 25 °C
note 2
−
note 3
−
note 4
−
−
50
nA
120 250
9
−
GHz
0.9
−
pF
2
−
pF
0.5
−
pF
16
−
dB
10
−
dB
15
−
dB
1.3 1.8 dB
1.9 2.4 dB
2.1
−
dB
21
−
dBm
34
−
500 −
−50 −
dBm
mV
dB
Notes
1. G_UM is the maximum unilateral power gain, assuming s₁₂ is zero. G_UM
2. I_C = 40 mA; V_CE = 8 V; R_L = 50 Ω; T_amb = 25 °C;
=
10
log --₍--1-----_–------s---₁---₁----₂^s---₎-²--¹-₍---1-²----_–------s---₂--₂-----₂---₎-
dB.
a) f_p = 900 MHz; f_q = 902 MHz; measured at f_{(2p − q)} = 898 MHz and f_{(2q − p)} = 904 MHz.
3. d_im = −60 dB (DIN45004B); V_p = V_o; V_q = V_o −6 dB; V_r = V_o −6 dB; R_L = 75 Ω; V_CE = 8 V; I_C = 40 mA;
a) f_p = 795.25 MHz; f_q = 803.25 MHz; f_r = 805.25 MHz; measured at f_{(p + q − r)} = 793.25 MHz.
4. I_C = 40 mA; V_CE = 8 V; V_o = 275 mV; R_L = 75 Ω; T_amb = 25 °C;
a) f_p = 250 MHz; f_q = 560 MHz; measured at f_{(p + q)} = 810 MHz.
1997 Dec 04
4