BFG540W Datasheet, PDF (5/16 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG540W
BFG540W/X; BFG540W/XR
handboo²k,⁵h⁰alfpage
hFE
200
150
100
50
0
10^−2
10^−1
1
MRA749
10
10²
IC (mA)
V_CE = 8 V.
Fig.4 DC current gain as a function of
collector current; typical values.
handbook, h¹alfpage
Cre
(pF)
0.8
0.6
0.4
0.2
0
0
4
MRA750
8
12
VCB (V)
I_C = 0; f = 1 MHz.
Fig.5 Feedback capacitance as a function of
collector-base voltage; typical values.
handbook,¹h²alfpage
fT
(GHz)
8
4
MLC044
VCE = 8 V
VCE = 4 V
0
10 ¹
1
10 _{I C (mA)} 10 ²
f = 1 GHz; T_amb = 25 °C.
Fig.6 Transition frequency as a function of
collector current; typical values.
1997 Dec 04
5