BFG540W Datasheet, PDF (2/16 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG540W
BFG540W/X; BFG540W/XR
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
APPLICATIONS
They are intended for applications in
the RF front end, in wideband
applications in the GHz range such as
analog and digital cellular telephones,
cordless telephones (CT2, CT3,
PCN, DECT, etc.), radar detectors,
pagers, satellite television tuners
(SATV), MATV/CATV amplifiers and
repeater amplifiers in fibre-optic
systems.
DESCRIPTION
NPN silicon planar epitaxial
transistors in plastic, 4-pin
dual-emitter SOT343N and SOT343R
packages.
MARKING
TYPE NUMBER
BFG540W
BFG540W/X
BFG540W/XR
CODE
N9
N7
N8
PINNING
PIN
DESCRIPTION
BFG540W (see Fig.1)
1 collector
2 base
3 emitter
4 emitter
BFG540W/X (see Fig.1)
1 collector
2 emitter
3 base
4 emitter
BFG540W/XR (see Fig.2)
1 collector
2 emitter
3 base
4 emitter
page
4
3
1
Top view
2
MSB014
Fig.1 SOT343N.
page
3
4
2
Top view
1
MSB842
Fig.2 SOT343R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CES
I_C
P_tot
h_FE
C_re
f_T
G_UM
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
|s₂₁|²
F
insertion power gain
noise figure
CONDITIONS
MIN. TYP. MAX. UNIT
open emitter
− − 20 V
R_BE = 0
− − 15 V
− − 120 mA
up to T_s = 85 °C
−
I_C = 40 mA; V_CE = 8 V
60
I_C = 0; V_CB = 8 V; f = 1 MHz
−
I_C = 40 mA; V_CE = 8 V; f = 1 GHz; T_amb = 25 °C −
I_C = 40 mA; V_CE = 8 V; f = 900 MHz; T_amb = 25 °C −
I_C = 40 mA; V_CE = 8 V; f = 2 GHz; T_amb = 25 °C
I_C = 40 mA; V_CE = 8 V; f = 900 MHz; T_amb = 25 °C 14
Γ_s = Γ_opt; I_C = 10 mA; V_CE = 8 V; f = 2 GHz
−
− 500
120 250
0.5 −
9−
16 −
10 −
15 −
2.1 −
mW
pF
GHz
dB
dB
dB
dB
1997 Dec 04
2