BFG540W Datasheet, PDF (12/16 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG540W
BFG540W/X; BFG540W/XR
SPICE parameters for the BFG540W crystal
SEQUENCE No. PARAMETER VALUE UNIT
1
IS
1.045 fA
2
BF
184.3 −
3
NF
0.981 −
4
VAF
41.69 V
5
IKF
10.00 A
6
ISE
232.4 fA
7
NE
2.028 −
8
BR
43.99 −
9
NR
0.992 −
10
VAR
2.097 V
11
IKR
166.2 mA
12
ISC
129.8 aA
13
14
15
16
17
18
19 ⁽¹⁾
20 ⁽¹⁾
21 ⁽¹⁾
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
1.064 −
5.000 Ω
1.000 µA
5.000 Ω
353.5 mΩ
1.340 Ω
0.000 −
1.110 eV
3.000 −
22
CJE
1.978 pF
23
VJE
600.0 mV
24
MJE
0.332 −
25
TF
7.457 ps
26
XTF
11.40 −
27
VTF
3.158 V
28
ITF
156.9 mA
29
PTF
0.000 deg
30
CJC
793.7 fF
31
VJC
185.5 mV
32
33
34
35 ⁽¹⁾
MJC
XCJC
TR
CJS
0.084 −
0.150 −
1.598 ns
0.000 F
SEQUENCE No.
36 ⁽¹⁾
37 ⁽¹⁾
38
PARAMETER
VJS
MJS
FC
VALUE UNIT
750.0 mV
0.000 −
0.814 −
Note
1. These parameters have not been extracted, the
default values are shown.
handbook, halfpage
C _cb
L1
B
C _be
LB
B' C'
E'
LE
L3
L2
C
Cce
MBC964
E
QL_B = 50; QL_E = 50; QL_B,E(f) = QL_B,E√(f/f_c)
f_c = scaling frequency = 1 GHz.
Fig.23 Package equivalent circuit
SOT343N; SOT343R.
List of components (see Fig.23).
DESIGNATION
C_be
C_cb
C_ce
L1
L2
L3
L_B
L_E
VALUE
70
50
115
0.34
0.10
0.25
0.40
0.40
UNIT
fF
fF
fF
nH
nH
nH
nH
nH
1997 Dec 04
12