TDA8051 Datasheet, PDF (6/24 Pages) NXP Semiconductors – QPSK receiver

Philips Semiconductors
QPSK receiver
Product specification
TDA8051
CHARACTERISTICS
Measured in application circuit with the following conditions: V_CC = 5 V; T_amb = 25°C. All AC units are RMS values,
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
UNIT
Supplies
V_CCA1
I_CCA1
V_CCA2
I_CCA2
V_CCA3
I_CCA3
V_cc(o)
I_cc(o)
V_CCD
I_CCD
V_CC(tune)
analog supply voltage
analog supply current
analog supply voltage
analog supply current
analog supply voltage
analog supply current
output supply voltage
output supply current
digital supply voltage
digital supply current
tuning supply voltage
4.75
−
4.75
−
4.75
−
4.75
−
4.75
−
−
Low noise amplifier: R_s = 75 Ω/R_i = 75 Ω unless otherwise specified
V_I(DC)
V_i
f_i
R_i
C_i
R_LLNA
NF_LNA
V_leak(LO)
DC input level
internally set
−
input level
−30
input carrier frequency
44
input resistance
−
input capacitance
−
input return loss
−
noise figure
−
LO leakage on pin at LNA_IN f_{N × LO} = 140 − 860 MHz;
−
pin LNA_OUT connected to
DEMOD_IN
f_LO/2 = 70 − 130 MHz;
−
pin LNA_OUT connected to
DEMOD_IN
G_LNA
V_o
∆V_o
IM3
LNA gain
output level
output flatness
3rd-order intermodulation
f = 100 MHz;
8
V_I(LNA) = 0 dBmV
−
−20
in 1 MHz bandwidth;
−
V_I(LNA) = 0 dBmV
44 to 70 MHz;
−
V_I(LNA) = 0 dBmV
70 to 130 MHz;
−
V_I(LNA) = 0 dBmV
2 carriers at +10 dBmV each −
at pin LNA_IN
at 103 to 105 MHz
5 5.25
23 −
5 5.25
18 −
5 5.25
29 −
5 5.25
17 −
5 5.25
13 −
− 30
0.85 −
−0
− 130
75 −
2.5 −
−15 −
7 11
− −15
−35 −30
10 −
− +10
0.25 0.5
0.50 −
1.3 1.5
− −60
V
mA
V
mA
V
mA
V
mA
V
mA
V
V
dBmV
MHz
Ω
pF
dB
dB
dBmV
dBmV
dB
dBmV
dB
dB
dB
dBc
1999 Aug 20
6