SA7016 Datasheet, PDF (6/18 Pages) NXP Semiconductors – 1.3GHz low voltage fractional-N synthesizer

Philips Semiconductors
1.3GHz low voltage fractional-N synthesizer
Product specification
SA7016
SYMBOL
PARAMETER
CONDITIONS
Phase noise (R_SET = 7.5 kΩ, CP=00)
Synthesizer’s contribution to close-in phase noise
of 900 MHz RF signal at 1 kHz offset.
L_(f)
Synthesizer’s contribution to close-in phase noise
of 800 MHz RF signal at 1 kHz offset.
GSM
f_REF = 13MHz, TCXO,
f_COMP = 1MHz
indicative, not tested
TDMA
f_REF = 19.44MHz, TCXO,
f_COMP = 240kHz
indicative, not tested
Interface logic input signal levels; pins 13, 14, 15, 16
V_IH
HIGH level input voltage
V_IL
LOW level input voltage
I_LEAK
Input leakage current
Lock detect output signal (in push/pull mode); pin 1
logic 1 or logic 0
V_OL
LOW level output voltage
V_OH
HIGH level output voltage
NOTES:
1.
I_SET
=
V_SET
R_SET
bias
current
for
charge
pumps.
I_sink=2mA
I_source=–2mA
2. The relative output current variation is defined as:
DI_OUT
I_OUT
+
2^.
(I₂–I₁)
I(I₂ ) I₁)I
;
with V₁ + 0.7V,
V₂ + V_DDCP –0.8V
(See Figure 3.)
MIN.
TYP.
–
–90
–
–85
0.7*V_DD
–
–0.3
–
–0.5
–
–
–
V_DD–0.4
–
MAX.
UNIT
–
dBc/Hz
–
dBc/Hz
V_DD+0.3 V
0.3*V_DD V
+0.5
µA
0.4
V
–
V
I_ZOUT
CURRENT
I₂
I₁
V₁
V₂
V_PH
I₂
I₁
Figure 3. Relative Output Current Variation
SR00602
1999 Nov 04
6