SA7016 Datasheet, PDF (4/18 Pages) NXP Semiconductors – 1.3GHz low voltage fractional-N synthesizer

Philips Semiconductors
1.3GHz low voltage fractional-N synthesizer
Product specification
SA7016
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
V_DD
V_DDCP
∆V_DDCP–V_DD
V_n
V₁
∆V_GND
Digital supply voltage
–0.3
Analog supply voltage
–0.3
Difference in voltage between V_{DDCP and} V_DD (V_DDCP ≥ V_DD)
Voltage at pins 1, 2, 5, 6, 11 to 16
–0.3
–0.3
Voltage at pin 8, 9
–0.3
Difference in voltage between GND_CP and GND (these pins should –0.3
be connected together)
T_stg
Storage temperature
–55
T_amb
Operating ambient temperature
–40
T_j
Maximum junction temperature
MAX.
+5.5
+5.5
+2.8
V_DD + 0.3
V_DDCP+ 0.3
+0.3
UNIT
V
V
V
V
V
V
+125
_C
+85
_C
150
_C
Handling
Inputs and outputs are protected against electrostatic discharge in
normal handling. However, to be totally safe, it is desirable to take
normal precautions appropriate to handling MOS devices.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j–a}
Thermal resistance from junction to ambient in free air
VALUE
120
UNIT
K/W
1999 Nov 04
4