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SA7016 Datasheet, PDF (5/18 Pages) NXP Semiconductors – 1.3GHz low voltage fractional-N synthesizer
Philips Semiconductors
1.3GHz low voltage fractional-N synthesizer
Product specification
SA7016
CHARACTERISTICS
VDDCP = VDD = +3.0V, Tamb = +25°C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
Supply; pins 3, 9
VDD
Digital supply voltage
2.7
VDDCP
Analog supply voltage
VDDCP = VDD
2.7
IDDTotal
Synthesizer operational total supply current
VDD = +3.0V
–
IStandby
Total supply current in power-down mode
logic levels 0 or VDD
–
RFin main divider input; pins 5, 6
fVCO
VRFin(rms)
VCO input frequency
AC-coupled input signal level
350
Rin (external) = Rs = 50Ω;
–18
single-ended drive;
max. limit is indicative
@ 500 to 1300 MHz
ZIRFin
Input impedance (real part)
CIRFin
Typical pin input capacitance
Nmain
Main divider ratio
fPCmax
Maximum loop comparison frequency
Reference divider input; pins 11, 12
fVCO = 1.2 GHz
–
fVCO = 1.2 GHz
–
512
indicative, not tested
–
fREFin
VRFin
Input frequency range from TCXO
AC-coupled input signal level
5
single-ended drive;
360
max. limit is indicative
ZREFin
Input impedance (real part)
fREF = 20 MHz
–
CREFin
Typical pin input capacitance
fREF = 20 MHz
–
RREF
Reference division ratio
4
Charge pump current setting resistor input; pin 10
RSET
External resistor from pin to ground
6
VSET
Regulated voltage at pin
RSET=7.5 kΩ
–
Charge pump outputs (including fractional compensation pump); pin 8; RSET =7.5kΩ, FC=80
ICP
Charge pump current ratio to ISET1
Current gain IPH/ISET
–15
IMATCH
Sink-to-source current matching
VPH=1/2 VDDCP.
–10
IZOUT
Output current variation versus VPH2
VPH in compliance range
–10
ILPH
Charge pump off leakage current
VPH=1/2 VCC
–10
VPH
Charge pump voltage compliance
0.7
TYP.
–
–
6.2
1
–
–
MAX.
UNIT
5.5
V
5.5
V
7.3
mA
TBD µA
1300
0
MHz
dBm
625
–
Ω
1.0
–
pF
–
65535
–
4
MHz
–
40
MHz
–
1300
mVPP
10
–
kΩ
1.0
–
pF
–
1023
7.5
15
kΩ
1.25
–
V
+15
%
+10
%
+10
%
+10
nA
–
VDDCP–0.8 V
1999 Nov 04
5