SA1638 Datasheet, PDF (6/26 Pages) NXP Semiconductors – Low voltage IF I/Q transceiver

Philips Semiconductors
Low voltage IF I/Q transceiver
Product specification
SA1638
DC ELECTRICAL CHARACTERISTICS
V_CCTxRx=V_CCDIG=V_CCCP=PONRx=PONPLL= +3V; V_EEDIG = V_EECP=GND1=GND2=GND3=PDTx = 0V; T_A = 25°C, unless otherwise stated.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
MIN
–3σ TYP +3σ
MAX
UNITS
Supply current
Rx and IF synthesizer active
PONRx = PONPLL = PDTx = Hi
14.4
16
17.6
20
I_CC
Tx and IF synthesizer active
PONRx = PDTx = Low;
PONPLL = Hi
17.4 19.5 21.6
24
mA
Power-down mode
PONRx = PONPLL = Low;
PDTx = Hi
0.068
V_REF
IV_REF
I_OUT
Reference voltage
V_REF
I_SINK
I_SOURCE
DC output current
Generated internally
At pins TxIFOUT and
TxIFOUTX
1.39 1.57 1.75
V
5
5
µA
1.5
1.86 2.0 2.14
2.7
mA
Digital inputs (P_ON)
V_IH High level input voltage range
V_IL
Low level input voltage range
Digital inputs (PDTx, P_ONRx, P_ONPLL, P_ON)
V_IH High level input voltage range
V_IL
Low level input voltage range
Digital inputs (Clock, Data, Strobe)
2.0
V_BATT
V
0
0.8
V
2.0
V_CCTxRx
V
0
0.8
V
V_IH High level input voltage range
V_IL
Low level input voltage range
Digital outputs (LOCK, AOUT, BOUT)
2.0
V_CCDig
V
0
0.8
V
V_OH Output voltage HIGH
V_OL Output voltage LOW
I_O = -2mA
I_O = 2mA
V_CCDIG–0.4
V
0.4
V
AC ELECTRICAL CHARACTERISTICS
V_CCTxRx=V_CCDIG=V_CCCP=PONRx=PONPLL= +3V; V_EEDIG = V_EECP=GND1=GND2=GND3=PDTx = 0V; LO_IN = 100mV_PEAK, 800MHz;
CLK_IN = 100mV_PEAK, 52MHz; serial registers programmed with default values; T_A = 25°C unless otherwise stated. Test Circuit Figure 8.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
MIN –3σ TYP +3σ
MAX
UNITS
IF Transmit Modulator
BW Input modulation bandwidth
200Ω source impedance
0.82 0.94 1.06
MHz
V_COM
Common mode range for
baseband inputs
DC at pins ITxIN, ITxINx,
QTxIN, QTxINx
1
1.5
2
V
V_IN Peak input signal amplitude
Third harmonic distortion¹
R_INTx Input resistance
Centered on V_COM
0.75
V
| ITxIn | = | ITxInX | =
| QTxIn | = | QTxInX |
= 0.75V_PEAK; fin = 20kHz
-61
-57
-53
-40
dB
Between pins: ITxIn and
ITxInX or QTxIn and
112
kΩ
QTxInX
C_INTx Input capacitance
At ITxIn, ITxInX,
QTxIn, QTxInX
10
pF
I_OUT
Output saturation limit
RMS output current
S_LO LO suppression¹
SSB Sideband suppression¹
| ITxIn | = | ITxInX | =
| QTxIn | = | QTxInX |
= 0.75V_PEAK
| ITxIn | = | ITxInX | =
| QTxIn | = | QTxInX |
= 0.75V_PEAK; fin = 20k
| ITxIn | = | ITxInX | =
| QTxIn | = | QTxInX |
= 0.75V_PEAK; fin = 20k
V_CCTxRx-0.3
V
0.6 0.73 0.82 0.91
1.08
mA
+30
+43
dB
+35
+50
dB
1997 Sept 03
6