PSMN3R3-80BS_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel 80 V, 3.5 m standard level MOSFET in D2PAK

NXP Semiconductors
PSMN3R3-80BS
N-channel 80 V, 3.5 mΩ standard level MOSFET in D2PAK
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
t_rr
reverse recovery time I_S = 25 A; dI_S/dt = 100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 20 V
Min Typ Max Unit
-
0.8 1.2 V
-
59 -
ns
-
109 -
nC
250
g_fs
(S)
200
003aaf619
150
100
50
0
0
15
30
45
60
75
I_D (A)
80
I_D
(A)
60
40
20
0
0
003aaf620
T_j = 175 °C
T_j = 25 °C
2
4 _VGS(V) 6
Fig 5. Forward transconductance as a function of
drain current; typical values
10⁵
C
(pF)
10⁴
003aaf623
C_iss
C_rss
10³
10²
10^-1
1
10 _VGS(V) 10²
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
25
R_DSon
(mΩ)
20
003aag697
15
10
5
0
0
5
10
15
20
V_GS (V)
Fig 7. Input and reverse transfer capacitances as a
Fig 8. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of gate-source voltage; typical values
PSMN3R3-80BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 February 2012
© NXP B.V. 2012. All rights reserved.
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