PSMN3R3-80BS_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel 80 V, 3.5 m standard level MOSFET in D2PAK

NXP Semiconductors
PSMN3R3-80BS
N-channel 80 V, 3.5 mΩ standard level MOSFET in D2PAK
5. Thermal characteristics
Table 5.
Symbol
R_th(j-mb)
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction
to ambient
Conditions
see Figure 4
minimum footprint; mounted on a
printed circuit board
Min Typ Max Unit
-
0.22 0.49 K/W
-
50 -
K/W
1
Zth(j-mb)
(K/W)
10^-1
δ = 0.5
0.2
0.1
0.05
10^-2
0.02
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P
δ = ^tp
T
single shot
t_p
t
T
10^-3
10^-6
10^-5
10^-4
10^-3
10^-2
10^-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN3R3-80BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 February 2012
© NXP B.V. 2012. All rights reserved.
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