 English |
|
|
|
|
|
|
|
| PSMN3R3-80BS_15 Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel 80 V, 3.5 m standard level MOSFET in D2PAK | |||
| |||
| ◁ |
NXP Semiconductors
PSMN3R3-80BS
N-channel 80 V, 3.5 m⦠standard level MOSFET in D2PAK
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10;see Figure 11
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 80 V; VGS = 0 V; Tj = 25 °C
VDS = 80 V; VGS = 0 V; Tj = 175 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 12;see Figure 13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 13
VGS = 10 V; ID = 25 A; Tj = 100 °C;
see Figure 12;see Figure 13
RG
internal gate resistance f = 1 MHz
(AC)
Dynamic characteristics
QG(tot)
QGS
QGS(th)
total gate charge
gate-source charge
pre-threshold
gate-source charge
ID = 0 A; VDS = 0 V; VGS = 10 V
ID = 75 A; VDS = 40 V; VGS = 10 V;
see Figure 14; see Figure 15
QGS(th-pl)
post-threshold
gate-source charge
QGD
VGS(pl)
gate-drain charge
gate-source plateau
voltage
ID = 75 A; VDS = 40 V;
see Figure 14; see Figure 15
Ciss
input capacitance
VDS = 40 V; VGS = 0 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; see Figure 16
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
turn-off delay time
fall time
VDS = 40 V; RL = 0.53 â¦; VGS = 10 V;
RG(ext) = 4.7 â¦; ID = 75 A
Min Typ Max Unit
73 -
-
V
80 -
-
V
1
-
-
V
-
-
4.6 V
2
3
4
V
-
0.02 10 µA
-
-
500 µA
-
10 100 nA
-
10 100 nA
-
7.1 8.4 mâ¦
-
3
3.5 mâ¦
-
4.95 5.8 mâ¦
-
0.9 -
â¦
-
104 -
nC
-
111 -
nC
-
38 -
nC
-
24 -
nC
-
14 -
nC
-
28 -
nC
-
6.1 -
V
-
8161 -
pF
-
701 -
pF
-
337 -
pF
-
38 -
ns
-
29 -
ns
-
94 -
ns
-
33 -
ns
PSMN3R3-80BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 â 29 February 2012
© NXP B.V. 2012. All rights reserved.
5 of 14
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese