PSMN3R3-80BS_15 Datasheet, PDF (2/14 Pages) NXP Semiconductors – N-channel 80 V, 3.5 m standard level MOSFET in D2PAK

NXP Semiconductors
PSMN3R3-80BS
N-channel 80 V, 3.5 mΩ standard level MOSFET in D2PAK
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
gate
D
drain
S
source
D
drain
3. Ordering information
Simplified outline
mb
2
13
SOT404 (D2PAK)
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN3R3-80BS
D2PAK
4. Limiting values
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V_DS
V_DGR
V_GS
I_D
I_DM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
T_j ≥ 25 °C; T_j ≤ 175 °C; R_GS = 20 kΩ
V_GS = 10 V; T_mb = 100 °C; see Figure 1
V_GS = 10 V; T_mb = 25 °C; see Figure 1
pulsed; t_p ≤ 10 µs; T_mb = 25 °C;
see Figure 3
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
T_sld(M)
peak soldering temperature
Source-drain diode
T_mb = 25 °C; see Figure 2
I_S
source current
I_SM
peak source current
Avalanche ruggedness
T_mb = 25 °C
pulsed; t_p ≤ 10 µs; T_mb = 25 °C
E_DS(AL)S
non-repetitive drain-source
avalanche energy
V_GS = 10 V; T_j(init) = 25 °C; I_D = 120 A;
V_sup ≤ 80 V; R_GS = 50 Ω; unclamped
[1] Continuous current is limited by package.
Min
-
-
-20
[1] _-
[1] _-
-
Max Unit
80 V
80 V
20 V
120 A
120 A
760 A
-
306 W
-55 175 °C
-55 175 °C
-
260 °C
[1] _-
120 A
-
760 A
-
676 mJ
PSMN3R3-80BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 February 2012
© NXP B.V. 2012. All rights reserved.
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