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PSMN3R3-80BS_15 Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel 80 V, 3.5 m standard level MOSFET in D2PAK
NXP Semiconductors
PSMN3R3-80BS
N-channel 80 V, 3.5 mΩ standard level MOSFET in D2PAK
240
ID
(A)
180
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120
(1)
60
0
0
50
100
150
200
Tmb (°C)
120
Pder
(%)
80
03aa16
40
0
0
50
100
150
200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
103
ID
(A)
102
Limit RDSon = VDS/ ID
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
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tp =10 μ s
100 μ s
10
1 ms
1
DC
10 ms
100 ms
10-1
10-1
1
10
102
103
V DS(V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN3R3-80BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 February 2012
© NXP B.V. 2012. All rights reserved.
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