BUK109-50GL Datasheet, PDF (6/11 Pages) NXP Semiconductors – PowerMOS transistor Logic level TOPFET

Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK109-50GL
RDS(ON) / ohm
0.20
(3V)
0.15
BUK109-50GL
VIS = 4 V
5V
6V
0.10
0.05
0
0
20
40
60
80
ID / A
Fig.8. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_IS; t_p = 250 µs
ID / A
50
BUK109-50GL
40
NORMAL
30
20
10
RESET
OVERLOAD
PROTECTION
LATCHED
0
0
1
2
3
4
5
VIS / V
Fig.9. Typical transfer characteristics, T_j = 25 ˚C.
I_D = f(V_IS) ; conditions: V_DS = 10 V; t_p = 250 µs
26 ^{gfs / S}
BUK109-50GL
24
22
20
18
16
14
12
10
8
6
4
2
0
0
10
20
30
40
50
60
ID / A
Fig.10. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D); conditions: V_DS = 10 V; t_p = 250 µs
a
1.5
Normalised RDS(ON) = f(Tj)
1.0
0.5
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.11. Normalised drain-source on-state resistance.
a = R_DS(ON)/R_DS(ON)25 ˚C = f(T_j); I_D = 13 A; V_IS = 5 V
td sc / ms
100
BUK109-50GL
10
PDSM
1
0.1
0.1
1
10
PDS / kW
Fig.12. Typical overload protection characteristics.
t_{d sc} = f(P_DS); conditions: V_IS ≥ 4 V; T_j = 25 ˚C.
PDSM%
120
100
80
60
40
20
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tmb / C
Fig.13. Normalised limiting overload dissipation.
P_DSM% =100⋅P_DSM/P_DSM(25 ˚C) = f(T_mb)
June 1996
6
Rev 1.000