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| BUK109-50GL Datasheet, PDF (4/11 Pages) NXP Semiconductors – PowerMOS transistor Logic level TOPFET | |||
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Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK109-50GL
TRANSFER CHARACTERISTICS
Tmb = 25 ËC
SYMBOL PARAMETER
gfs
Forward transconductance
ID(SC)
Drain current1
CONDITIONS
VDS = 10 V; IDM = 13 A tp ⤠300 µs;
δ ⤠0.01
VDS = 13 V; VIS = 5 V
MIN. TYP. MAX. UNIT
10 16
-
S
-
40
-
A
SWITCHING CHARACTERISTICS
Tmb = 25 ËC. RI = 50 ⦠. Refer to waveform figures and test circuits.
SYMBOL PARAMETER
CONDITIONS
td on
Turn-on delay time
tr
Rise time
td off
Turn-off delay time
tf
Fall time
td on
Turn-on delay time
tr
Rise time
td off
Turn-off delay time
tf
Fall time
VDD = 13 V; VIS = 5 V
resistive load RL = 2.1 â¦
VDD = 13 V; VIS = 0 V
resistive load RL = 2.1 â¦
VDD = 10 V; VIS = 5 V
inductive load IDM = 6 A
VDD = 10 V; VIS = 0 V
inductive load IDM = 6 A
MIN.
-
-
-
-
-
-
-
-
TYP.
2.5
15
10
7
2
4
15
1
MAX.
-
-
-
-
-
-
-
-
UNIT
µs
µs
µs
µs
µs
µs
µs
µs
REVERSE DIODE LIMITING VALUE
SYMBOL PARAMETER
IS
Continuous forward current
CONDITIONS
Tmb ⤠25 ËC
MIN.
-
MAX.
26
UNIT
A
REVERSE DIODE CHARACTERISTICS
Tmb = 25 ËC
SYMBOL PARAMETER
CONDITIONS
VSDS
Forward voltage
trr
Reverse recovery time
IS = 26 A; VIS = 0 V; tp = 300 µs
not applicable2
MIN.
-
-
TYP. MAX. UNIT
1.0 1.5 V
-
-
-
ENVELOPE CHARACTERISTICS
SYMBOL PARAMETER
Ld
Internal drain inductance
Ls
Internal source inductance
CONDITIONS
Measured from upper edge of tab
to centre of die
Measured from source lead
soldering point to source bond pad
MIN. TYP. MAX. UNIT
-
2.5
-
nH
-
7.5
-
nH
1 During overload before short circuit load protection operates.
2 The reverse diode of this type is not intended for applications requiring fast reverse recovery.
June 1996
4
Rev 1.000
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