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BUK109-50GL Datasheet, PDF (1/11 Pages) NXP Semiconductors – PowerMOS transistor Logic level TOPFET
Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK109-50GL
DESCRIPTION
Monolithic temperature and
overload protected logic level power
MOSFET in a 3 pin plastic surface
mount envelope, intended as a
general purpose switch for
automotive systems and other
applications.
APPLICATIONS
General controller for driving
lamps
motors
solenoids
heaters
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
PD
Tj
RDS(ON)
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
VIS = 5 V
FEATURES
Vertical power DMOS output
stage
Low on-state resistance
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by input
5 V logic compatible input level
Control of power MOSFET
and supply of overload
protection circuits
derived from input
Low operating input current
ESD protection on input pin
Overvoltage clamping for turn
off of inductive loads
FUNCTIONAL BLOCK DIAGRAM
INPUT
O/V
CLAMP
RIG
LOGIC AND
PROTECTION
MAX.
50
26
75
150
60
UNIT
V
A
W
˚C
mΩ
DRAIN
POWER
MOSFET
SOURCE
PINNING - SOT404
PIN
DESCRIPTION
1 input
2 drain
3 source
mb drain
Fig.1. Elements of the TOPFET.
PIN CONFIGURATION
SYMBOL
mb
D
TOPFET
2
13
I
P
S
June 1996
1
Rev 1.000