BUK109-50GL Datasheet, PDF (3/11 Pages) NXP Semiconductors – PowerMOS transistor Logic level TOPFET

Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK109-50GL
THERMAL CHARACTERISTICS
SYMBOL PARAMETER
Thermal resistance
R_{th j-mb}
R_{th j-a}
Junction to mounting base
Junction to ambient
CONDITIONS
-
minimum footprint FR4 PCB
(see fig. 32)
MIN. TYP. MAX. UNIT
-
1.3 1.67 K/W
-
50
- K/W
STATIC CHARACTERISTICS
T_mb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_(CL)DSS
V_(CL)DSS
I_DSS
I_DSS
I_DSS
R_DS(ON)
Drain-source clamping voltage V_IS = 0 V; I_D = 10 mA
Drain-source clamping voltage
Zero input voltage drain current
Zero input voltage drain current
Zero input voltage drain current
Drain-source on-state
resistance
V_IS = 0 V; I_DM = 2 A; t_p ≤ 300 µs;
δ ≤ 0.01
V_DS = 12 V; V_IS = 0 V
V_DS = 50 V; V_IS = 0 V
V_DS = 40 V; V_IS = 0 V; T_j = 125 ˚C
V_IS = 5 V; I_DM = 13 A; t_p ≤ 300 µs;
δ ≤ 0.01
MIN.
50
-
TYP.
-
-
MAX.
-
70
UNIT
V
V
-
0.5 10 µA
-
1
20 µA
-
10 100 µA
-
45 60 mΩ
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off when one of the overload thresholds is reached. It remains latched off until reset by the input.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
E_DS(TO)
t_{d sc}
T_j(TO)
Short circuit load protection¹
Overload threshold energy
Response time
Over temperature protection
Threshold junction temperature
T_mb = 25 ˚C; L ≤ 10 µH
V_DD = 13 V; V_IS = 5 V
V_DD = 13 V; V_IS = 5 V
V_IS = 5 V; from I_D ≥ 1 A²
-
0.4
-
J
-
0.8
-
ms
150 -
-
˚C
INPUT CHARACTERISTICS
T_mb = 25 ˚C unless otherwise specified. The supply for the logic and overload protection is taken from the input.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V_IS(TO)
I_IS
V_ISR
V_ISR
I_ISL
V_(BR)IS
R_IG
Input threshold voltage
Input supply current
Protection reset voltage³
Protection reset voltage
Input supply current
Input clamp voltage
Input series resistance
V_DS = 5 V; I_D = 1 mA
V_IS = 5 V; normal operation
T_j = 150 ˚C
V_IS = 5 V; protection latched
I_I = 10 mA
to gate of power MOSFET
1.0 1.5 2.0 V
-
0.2 0.35 mA
2.0 2.6 3.5 V
1.0
-
-
0.5 1.2 2.0 mA
6
7
-
V
-
4
-
kΩ
1 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for
P_DSM, which is always the case when V_DS is less than V_DSP maximum. Refer to OVERLOAD PROTECTION LIMITING VALUES.
2 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum I_D
ensures this condition.
3 The input voltage below which the overload protection circuits will be reset.
June 1996
3
Rev 1.000