BUJ103AD_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – Silicon diffused power transistor

NXP Semiconductors
BUJ103AD
Silicon diffused power transistor
10²
h_FE
T_j = 25 °C
10
001aab994
V_CE = 5 V
1V
2.0
V_CEsat
(V)
I_C = 1 A 2 A 3 A 4 A
1.6
001aab995
1.2
0.8
0.4
1
10^−2
10^−1
1
10
I_C (A)
Fig 9. DC current gain as a function of collector
current; typical values
0
10^−2
10^−1
1
10
I_B (A)
T_j = 25 C.
Fig 10. Collector-emitter saturation voltage as a
function of base current; typical values
1.4
V_BEsat
(V)
1.2
1.0
001aab996
V_CEsat
(V) 0.5
0.4
001aab997
0.8
0.3
0.6
0.2
0.4
0.1
0.2
0
10^−1
1
10
I_C (A)
I_C/I_B = 4.
Fig 11. Base-emitter saturation voltage as a function
of collector current; typical values
0
10^−1
1
10
I_C (A)
I_C/I_B = 4.
Fig 12. Collector-emitter saturation voltage as a
function of collector current; typical values
BUJ103AD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 8 November 2011
© NXP B.V. 2011. All rights reserved.
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