BUJ103AD_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – Silicon diffused power transistor

NXP Semiconductors
BUJ103AD
Silicon diffused power transistor
Table 5. Characteristics …continued
T_mb = 25 C; unless otherwise specified.
Symbol Parameter
Conditions
h_FEsat
DC saturation current gain
Dynamic characteristics
I_C = 2.0 A; V_CE = 5 V
I_C = 3.0 A; V_CE = 5 V
Switching times (resistive load); see Figure 5 and 6
t_on
turn-on time
t_stg
storage time
I_Con = 2.5 A; I_Bon = I_Boff = 0.5 A;
R_L = 75 
t_f
fall time
Switching times (inductive load); see Figure 7 and 8
t_stg
storage time
t_f
fall time
I_Con = 2 A; I_Bon = 0.4 A; L_B = 1 H;
V_BB = 5 V
Switching times (inductive load); see Figure 7 and 8
t_stg
storage time
t_f
fall time
I_Con = 2 A; I_Bon = 0.4 A; L_B = 1 H;
V_BB = 5 V; T_j = 100 C
[1] Measured with half sine-wave voltage (curve tracer).
Min Typ Max Unit
11 16 22
-
12.5 -
-
0.52 0.6 s
-
2.7 3.3 s
-
0.3 0.35 s
-
1.2 1.4 s
-
30 60 ns
-
-
1.8 s
-
-
120 ns
6V
30 Hz to 60 Hz
300 Ω
50 V
100 Ω to 200 Ω
horizontal
oscilloscope
vertical
1Ω
001aab987
Fig 3. Test circuit for collector-emitter sustaining
voltage
I_C
(mA)
250
100
10
0
min _{VCE (V)}
V_CEOsus
001aab988
Fig 4. Oscilloscope display for collector-emitter
sustaining voltage test waveform
BUJ103AD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 8 November 2011
© NXP B.V. 2011. All rights reserved.
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