BUJ103AD_15 Datasheet, PDF (2/13 Pages) NXP Semiconductors – Silicon diffused power transistor

NXP Semiconductors
BUJ103AD
Silicon diffused power transistor
3. Ordering information
Table 2. Ordering information
Type number
Package
Name
Description
Version
BUJ103AD
D-PAK
plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT428
4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_CESM
V_CBO
V_CEO
I_C
I_CM
I_B
I_BM
P_tot
T_stg
T_j
peak collector-emitter voltage
collector-base voltage
collector-emitter voltage
collector current (DC)
peak collector current
base current (DC)
peak base current
total power dissipation
storage temperature
junction temperature
V_BE = 0 V
open emitter
open base
T_mb  25 C; see Figure 1
Min
Max Unit
-
700
V
-
700
V
-
400
V
-
4
A
-
8
A
-
2
A
-
4
A
-
80
W
65
+150 C
-
150
C
120
P_der
(%)
80
001aab993
40
0
0
40
80
120
160
T_mb (°C)
P_der%
=
--------^P----^t--^o---^t-------  100%
P_{tot25 C}
Fig 1. Normalized total power dissipation as a function of mounting base temperature
BUJ103AD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 8 November 2011
© NXP B.V. 2011. All rights reserved.
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