 English |
|
|
|
|
|
|
|
| BUJ103AD_15 Datasheet, PDF (5/13 Pages) NXP Semiconductors – Silicon diffused power transistor | |||
| |||
| ◁ |
NXP Semiconductors
BUJ103AD
Silicon diffused power transistor
VIM
0
tp
T
VCC
RL
RB
DUT
001aab989
VIM = ï6 V to +8 V; VCC = 250 V; tp = 20 ïs;
ï¤ = tp/T = 0.01.
RB and RL calculated from ICon and IBon requirements.
Fig 5. Test circuit for resistive load switching
IC
90 %
ICon
90 %
IB
ton
ts
toff
IBon
10 %
t
tf
10 %
tr ⤠30 ns
âIBoff
t
001aab990
Fig 6. Switching times waveforms for resistive load
IC
ICon
90 %
VCC
IBon
VBB
LC
LB
DUT
001aab991
10 %
t
tf
ts
IB
toff
IBon
t
Fig 7.
VCC = 300 V; VBB = ï5 V; LC = 200 ïH; LB = 1 ïH.
Test circuit for inductive load switching
âIBoff
001aab992
Fig 8. Switching times waveforms for inductive load
BUJ103AD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 â 8 November 2011
© NXP B.V. 2011. All rights reserved.
5 of 13
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese