BUJ100B Datasheet, PDF (6/8 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ100B
tf /ns
5,000
2,000
1,000
500
IC/IB = 3
IC/IB = 5
200
100
IC/IB = 10
50
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
IC /A
Fig.19. Resistive switching.
tf = f(I_C)
VCC
LC
IBon
LB
VCL(RBSOAR)
PROBE POINT
-VBB
T.U.T.
Fig.20. Test Circuit for the RBSOA test.
V_cl ≤ 700V; V_cc = 150V; L_B = 1µH; L_c = 200µH
IC/A
2.5
2.25
2
1.75
1.5
1.25
1
0.75
0.5
0.25
0
0
-9V
-5V
-3V
-1V
100
200
300 400 500
VCEclamp/V
600
700
800
Fig.21. Reverse bias safe operating area T_j ≤ T_jmax
for -V_BE = 9V, 5V,3V & 1V
May 2001
6
Rev 1.000