BUJ100B Datasheet, PDF (5/8 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ100B
tsi /us
1
0.8
0.6
0.4
0.2
IC = 1.5A
IC = 1A
IC = 0.5A
tsi /us
1
0.8
0.6
0.4
0.2
IC/IB = 3
IC/IB = 5
IC/IB = 10
0
2
3
4
5
6
7
8
9
10
11
HFE GAIN (IC/IB)
Fig.13. Inductive switching.
tsi = f(h_FE)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
IC/A
Fig.14. Inductive switching.
tsi = f(I_C)
RESISTIVE SWITCHING
VCC
90 %
ICon
90 %
VIM
RB
0
tp
T
RL
T.U.T.
IC
ton
IB
10 %
tr 30ns
10 %
ts
tf
toff
IBon
Fig.15. Test circuit resistive load. V_IM = -6 to +8 V
V_CC = 250 V; t_p = 20 µs; δ = t_p / T = 0.01.
R_B and R_L calculated from I_Con and I_Bon requirements.
-IBoff
Fig.16. Switching times waveforms with resistive load.
ton /us
2
1.5
1
IC/IB = 10
IC/IB = 5
ts us
2.5
2
1.5
1
IC/IB = 3
IC/IB = 5
0.5
IC/IB = 3
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
IC/A
Fig.17. Resistive switching.
ton = f(I_C)
0.5
IC/IB = 10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
IC/A
Fig.18. Resistive switching.
ts = f(I_C)
May 2001
5
Rev 1.000