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| BUJ100B Datasheet, PDF (2/8 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ100B
STATIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
ICES,ICBO
ICES
Collector cut-off current 1
ICEO
IEBO
VCEOsust
VCEsat
VBEsat
hFE
hFE
hFE
Collector cut-off current 1
Emitter cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ËC
VCEO = VCEOMmax (350V)
VEB = 9 V; IC = 0 A
IB = 0 A; IC = 10 mA;
L = 25 mH
IC = 1 A; IB = 0.2 A
IC = 1 A; IB = 0.2 A
IC = 1mA; VCE = 5 V
IC = 100mA; VCE = 5 V
IC = 1.0 A; VCE = 5 V
MIN.
-
-
TYP. MAX. UNIT
0.8 100 µA
2.0 500 µA
-
-
100 µA
- 0.05 100 µA
350
-
-
V
-
0.27 1.0
V
-
1.03 1.3
V
17 23
-
19 30 46
9
12 19
DYNAMIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
Switching times (resistive load)
ton
Turn-on time
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (inductive load)
tsi
Turn-off storage time
tfi
Turn-off fall time
Switching times (inductive load)
tsi
Turn-off storage time
tfi
Turn-off fall time
CONDITIONS
ICon = 1.0 A; IBon = -IBoff = 0.2 A;
RL = 75 ohms; VBB2 = 4V;
ICon = 1.0 A; IBon = 0.2 A; LB = 1 µH;
-VBB = 5 V
ICon = 1.0 A; IBon = 0.2 A; LB = 1 µH;
-VBB = 5 V; Tj = 100 ËC
TYP. MAX. UNIT
1.0 1.28 µs
1.95 2.61 µs
0.22 0.30 µs
0.55 0.74 µs
56 76 ns
-
1.5 µs
-
140 ns
1 Measured with half sine-wave voltage (curve tracer).
May 2001
2
Rev 1.000
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