BUJ100B Datasheet, PDF (4/8 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ100B
VCEsat/V
1.2
1
0.8
0.6
0.4
0.2
0
0.01
0.02
0.05
0.1
0.2
IC/A
0.5
1
2
Fig.7. Collector-Emitter saturation voltage.
Solid Lines = typ values, I_C/I_B = 3
VBEsat/V
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.01
0.02
0.05
0.1
0.2
IC/A
0.5
1
2
Fig.8. Base-Emitter saturation voltage.
Solid Lines = typ values, I_C/I_B = 3
INDUCTIVE SWITCHING
VCC
IBon
-VBB
LC
LB
T.U.T.
Fig.9. Test circuit inductive load.
V_CC = 300 V; -V_BE = 5 V, L_C = 200 µH; L_B = 1 µH
tfi /ns
200
150
IC = 1.5A
100
IC = 1A
50
IC = 0.5A
0
2
3
4
5
6
7
8
9
10
11
HFE GAIN (IC/IB)
Fig.11. Inductive switching.
tfi = f(h_FE)
ICon
90 %
IC
10 %
ts
tf
t
toff
IB
IBon
t
-IBoff
Fig.10. Switching times waveforms with inductive load.
tfi /ns
250
200
IC/IB = 10
150
100
50
IC/IB = 5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
IC/A
Fig.12. Inductive switching.
tfi = f(I_C)
May 2001
4
Rev 1.000