BU506 Datasheet, PDF (6/12 Pages) NXP Semiconductors – Silicon diffused power transistors

Philips Semiconductors
Silicon diffused power transistors
1.5
handbook, halfpage
VBEsat
(V)
1
MGB881
(1)
(2)
(3)
10²
handbook, halfpage
hFE
(2)
(1)
10
Product specification
BU506; BU506D
MGB874
0.5
10^−1
(1) I_C = 3 A.
(2) I_C = 2 A.
(3) I_C = 1 A.
T_mb = 25 °C.
1
IB (A)
10
Fig.7 Base-emitter saturation voltage as a
function of base current; typical values.
1
10^−2
10^−1
1
IC (A) ¹⁰
(1) V_CE = 1 V; T_j = 25 °C.
(2) V_CE = 5 V; T_j = 125 °C.
Fig.8 DC current gain; typical values.
handbook, halfpage
iC
ICsat
iB
ts
MBH382
90%
10%
time
tf
IB _(end)
handbook, h⁵alfpage
IF
(A)
4
3
2
1
time
0
0.6
1
MGB906
1.4 _{VF (V)} 1.8
Fig.9 Switching time waveforms.
1997 Aug 13
T_mb = 25 °C.
Fig.10 Diode forward voltage.
5