BU506 Datasheet, PDF (5/12 Pages) NXP Semiconductors – Silicon diffused power transistors

Philips Semiconductors
Silicon diffused power transistors
Product specification
BU506; BU506D
handbook¹,²h⁰alfpage
Ptot _max
(%)
80
40
0
0
50
MGD283
100 _{Tmb (oC)} 150
handbook, halfpage
+ 50 V
100 to 200 Ω
L
horizontal
oscilloscope
vertical
6V
30 to 60 Hz
300 Ω
1Ω
MGE252
Fig.3 Power derating curve.
Fig.4 Test circuit for collector-emitter
sustaining voltage.
handbookI,_Chalfpage
(mA)
250
200
MGE239
10
handbook, halfpage
VCEsat
(V)
1
(1)
(2) (3)
MGB869
100
0
min ^{VCE (V)}
VCEOsust
Fig.5 Oscilloscope display for collector-emitter
sustaining voltage.
10^−1
10^−2
(1) I_C = 1 A.
(2) I_C = 2 A.
(3) I_C = 3 A.
T_mb = 25 °C.
10^−1
1
IB (A) ¹⁰
Fig.6 Collector-emitter saturation voltage as a
function of base current; typical values.
1997 Aug 13
4