BU506 Datasheet, PDF (2/12 Pages) NXP Semiconductors – Silicon diffused power transistors

Philips Semiconductors
Silicon diffused power transistors
Product specification
BU506; BU506D
DESCRIPTION
High-voltage, high-speed, switching
NPN power transistor in a TO-220AB
package. The BU506D has an
integrated efficiency diode.
APPLICATIONS
• Horizontal deflection circuits of
colour television receivers
• Line-operated switch-mode
applications.
PINNING
PIN
DESCRIPTION
1
base
2
collector; connected to
mounting base
3
emitter
MBK106
123
2
1
MBB008
3
a. BU506.
2
1
MBB077
3
b. BU506D.
Fig.1 Simplified outline (TO-220AB) and symbols.
QUICK REFERENCE DATA
SYMBOL
V_CESM
V_CEO
V_CEsat
V_F
I_Csat
I_C
I_CM
P_tot
t_f
PARAMETER
collector-emitter peak voltage
collector-emitter voltage
collector-emitter saturation
voltage
diode forward voltage (BU506D)
collector saturation current
collector current (DC)
collector current (peak value)
total power dissipation
fall time
CONDITIONS
V_BE = 0
open base
I_C = 3 A; I_B = 1.33 A; see Fig.6
I_F = 3 A; see Fig.10
see Fig.2
see Fig.2
T_mb ≤ 25 °C; see Fig.3
inductive load; see Fig.9
TYP.
−
−
−
MAX.
1 500
700
1
UNIT
V
V
V
1.5
−
V
−
3
A
−
5
A
−
8
A
−
100
W
0.7
−
µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-mb}
thermal resistance from junction to mounting base
VALUE
1.25
UNIT
K/W
1997 Aug 13
1