BU506 Datasheet, PDF (3/12 Pages) NXP Semiconductors – Silicon diffused power transistors

Philips Semiconductors
Silicon diffused power transistors
Product specification
BU506; BU506D
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CESM
V_CEO
I_Csat
I_C
I_CM
I_B
I_BM
P_tot
T_stg
T_j
collector-emitter peak voltage
collector-emitter voltage
collector saturation current
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
V_BE = 0
open base
see Fig.2
see Fig.2
T_mb ≤ 25 °C; see Fig.3
MIN.
−
−
−
−
−
−
−
−
−65
−
MAX.
1500
700
3
5
8
3
5
100
+150
150
UNIT
V
V
A
A
A
A
A
W
°C
°C
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_CEOsust
V_CEsat
V_BEsat
V_F
I_CES
collector-emitter sustaining voltage
collector-emitter saturation voltage
base-emitter saturation voltage
diode forward voltage (BU506D)
collector-emitter cut-off current
I_EBO
emitter-base cut-off current
h_FE
DC current gain
CONDITIONS
see Figs 4 and 5
I_C = 3 A; I_B = 1.33 A; see Fig.6
I_C = 3 A; I_B = 1.33 A; see Fig.7
I_F = 3 A; see Fig.10
V_CE = V_CESmax; V_BE = 0; note 1
V_CE = V_CESmax; V_BE = 0;
T_j = 125 °C; note 1
V_EB = 6 V; I_C = 0
V_CE = 5 V; I_C = 100 mA;
see Fig.8
MIN.
700
−
−
−
−
−
−
6
TYP.
−
−
−
1.5
−
−
−
13
MAX.
−
1
1.3
2.2
0.5
1
10
30
UNIT
V
V
V
V
mA
mA
mA
Switching times in horizontal deflection circuit (see Fig.9)
t_s
storage time
t_f
fall time
I_CM = 3 A; I_B(end) = 1A;
L_B = 12 µH
I_CM = 3 A; I_B(end) = 1A;
L_B = 12 µH
−
6.5
−
µs
−
0.7
−
µs
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 13
2