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| BAS56_15 Datasheet, PDF (6/12 Pages) Central Semiconductor Corp – HIGH CURRENT SILICON SWITCHING DIODES | |||
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NXP Semiconductors
BAS56
High-speed double diode
300
IF
(mA)
200
(1)
100
(2)
mbg439
0
0
100
Tamb (°C)
200
(1) Single diode loaded
(2) Double diode loaded
Fig 5. Forward current as a function of ambient temperature; derating curves
8. Test information
RS = 50 Ω
V = VR + IF Ã RS
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
Ri = 50 Ω
VR
mga881
tr
tp
10 %
90 %
input signal
(1) IR = 40 mA
Fig 6. Reverse recovery time test circuit and waveforms
I
1 kΩ
450 Ω
RS = 50 Ω
D.U.T.
OSCILLOSCOPE
Ri = 50 Ω
I
90 %
10 %
tr
tp
input signal
Input signal: pulse duration tp = 300 ns; duty cycle δ = 0.01.
Fig 7. Forward recovery voltage test circuit and waveforms
BAS56
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 â 29 June 2010
t
+ IF
trr
t
(1)
output signal
V
VFR
t
t
output signal
mga882
© NXP B.V. 2010. All rights reserved.
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