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BAS56_15 Datasheet, PDF (4/12 Pages) Central Semiconductor Corp – HIGH CURRENT SILICON SWITCHING DIODES
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NXP Semiconductors
BAS56
High-speed double diode
7. Characteristics
Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF
forward voltage
IF = 200 mA
IR
reverse current
VR = 60 V
VR = 60 V; Tj = 150 °C
VR = 120 V
VR = 120 V; Tj = 150 °C
Cd
diode capacitance
f = 1 MHz; VR = 0 V
trr
reverse recovery time
VFR
forward recovery voltage
Min Typ Max Unit
[1] -
-
1
V
-
-
100 nA
-
-
100 μA
[2] -
-
100 nA
[2] -
-
100 μA
-
-
2.5 pF
[3] -
-
6
ns
[4] -
-
2
V
[5] -
-
1.5 V
[1] Tamb = 25 °C; device has reached the thermal equilibrium when mounted on an FR4 PCB.
[2] Series connection.
[3] When switched from IF = 400 mA to IR = 400 mA; RL = 100 Ω; measured at IR = 40 mA.
[4] When switched from IF = 400 mA; tr = 30 ns.
[5] When switched from IF = 400 mA; tr = 100 ns.
BAS56
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 29 June 2010
© NXP B.V. 2010. All rights reserved.
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