BAS56_15 Datasheet, PDF (1/12 Pages) Central Semiconductor Corp – HIGH CURRENT SILICON SWITCHING DIODES

BAS56
High-speed double diode
Rev. 3 — 29 June 2010
Product data sheet
1. Product profile
1.1 General description
Two high-speed switching diodes fabricated in planar technology, and encapsulated in a
small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not
connected.
1.2 Features and benefits
„ High switching speed: t_rr ≤ 6 ns
„ Reverse voltage: V_R ≤ 60 V
„ Repetitive peak reverse voltage: V_RRM ≤ 60 V
„ Repetitive peak forward current: I_FRM ≤ 600 mA
„ AEC-Q101 qualified
„ Small SMD plastic package
1.3 Applications
„ High-speed switching in e.g. surface-mounted circuits
1.4 Quick reference data
Table 1.
Symbol
I_F
I_R
V_R
t_rr
Quick reference data
Parameter
forward current
reverse current
reverse voltage
reverse recovery time
Conditions
V_R = 60 V
Min Typ Max
[1][2] _-
-
200
-
-
100
-
-
60
[3] _-
-
6
[1] Single diode loaded.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB).
[3] When switched from I_F = 400 mA to I_R = 400 mA; R_L = 100 Ω; measured at I_R = 40 mA.
Unit
mA
nA
V
ns