BAS56_15 Datasheet, PDF (5/12 Pages) Central Semiconductor Corp – HIGH CURRENT SILICON SWITCHING DIODES

NXP Semiconductors
BAS56
High-speed double diode
300
I_F
(mA)
200
mbh279
10²
I_FSM
(A)
10
mbg703
100
1
0
0
T_j = 25 °C
1
V_F (V)
2
Fig 1. Forward current as a function of forward
voltage; typical values
10²
I_R
(μA)
10
mbh282
(1)
(2)
1
10^−1
10^−2
0
100
T_j (°C)
200
(1) V_R = 60 V; maximum values
(2) V_R = 60 V; typical values
Fig 3. Reverse current as a function of junction
temperature
10^−1
1
10
10²
10³
10⁴
t_p (μs)
Fig 2.
Based on square wave currents.
T_j = 25 °C; prior to surge
Non-repetitive peak forward current as a
function of pulse duration
2.0
C_d
(pF)
1.5
mbh283
1.0
0.5
0
0
10
f = 1 MHz; T_j = 25 °C
20
30
V_R (V)
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
BAS56
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 29 June 2010
© NXP B.V. 2010. All rights reserved.
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