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| PBHV8118T Datasheet, PDF (5/13 Pages) NXP Semiconductors – 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor | |||
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NXP Semiconductors
PBHV8118T
180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
collector-base cut-off VCB = 144 V; IE = 0 A
current
VCB = 144 V; IE = 0 A;
Tj = 150 °C
ICES
collector-emitter cut-off VCE = 144 V; VBE = 0 V
current
IEBO
emitter-base cut-off
VEB = 4 V; IC = 0 A
current
hFE
VCEsat
VBEsat
DC current gain
collector-emitter
saturation voltage
base-emitter saturation
voltage
VCE = 10 V
IC = 50 mA
IC = 100 mA
IC = 0.5 A
IC = 100 mA; IB = 10 mA
IC = 100 mA; IB = 20 mA
IC = 0.5 A; IB = 100 mA
td
delay time
tr
rise time
VCC = 6 V; IC = 0.5 A;
IBon = 0.1 A; IBoff = â0.1 A
ton
turn-on time
ts
storage time
tf
fall time
toff
turn-off time
fT
transition frequency VCE = 10 V; IC = 10 mA;
f = 100 MHz
Cc
collector capacitance VCB = 20 V; IE = ie = 0 A;
f = 1 MHz
Ce
emitter capacitance
VEB = 0.5 V; IC = ic = 0 A;
f = 1 MHz
Min
-
-
-
-
[1]
100
100
50
[1] -
[1] -
[1] -
-
-
-
-
-
-
-
-
-
[1] Pulse test: tp ⤠300 μs; δ ⤠0.02.
Typ Max Unit
-
100 nA
-
10 μA
-
100 nA
-
100 nA
250 -
250 -
100 -
40 60 mV
33 50 mV
1
1.2 V
7
-
565 -
572 -
1320 -
740 -
2060 -
30 -
ns
ns
ns
ns
ns
ns
MHz
5.7 -
pF
150 -
pF
PBHV8118T
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 â 7 May 2010
© NXP B.V. 2010. All rights reserved.
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