PBHV8118T Datasheet, PDF (4/13 Pages) NXP Semiconductors – 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
PBHV8118T
180 V, 1 A NPN high-voltage low V_CEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Symbol
R_th(j-a)
R_th(j-sp)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1] _-
-
417 K/W
-
-
70 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
10³
Z_th(j-a)
(K/W)
10²
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
10 _0.02
0.01
10
006aab151
10^−1
10^−5
10^−4
10^−3
10^−2
10^−1
1
10
10²
10³
t_p (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBHV8118T
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 7 May 2010
© NXP B.V. 2010. All rights reserved.
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