PBHV8118T Datasheet, PDF (3/13 Pages) NXP Semiconductors – 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
PBHV8118T
180 V, 1 A NPN high-voltage low V_CEsat (BISS) transistor
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_j
T_amb
T_stg
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
open emitter
open base
open collector
single pulse;
t_p ≤ 1 ms
single pulse;
t_p ≤ 1 ms
T_amb ≤ 25 °C
-
-
-
-
-
-
[1] _-
-
−55
−65
Max Unit
400
V
180
V
6
V
1
A
2
A
400
mA
300
mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
400
P_tot
(mW)
300
006aab150
200
100
0
−75
−25
25
75
125
175
T_amb (°C)
FR4 PCB, standard footprint
Fig 1. Power derating curve
PBHV8118T
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 7 May 2010
© NXP B.V. 2010. All rights reserved.
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