PBHV8118T Datasheet, PDF (1/13 Pages) NXP Semiconductors – 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

PBHV8118T
180 V, 1 A NPN high-voltage low V_CEsat (BISS) transistor
Rev. 01 — 7 May 2010
Product data sheet
1. Product profile
1.1 General description
NPN high-voltage low V_CEsat Breakthrough In Small Signal (BISS) transistor in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
„ High voltage
„ Low collector-emitter saturation voltage V_CEsat
„ High collector current capability I_C and I_CM
„ High collector current gain (h_FE) at high I_C
„ AEC-Q101 qualified
„ Small SMD plastic package
1.3 Applications
„ LED driver for LED chain module
„ LCD backlighting
„ Automotive power management
„ Hook switch for wired telecom
„ Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1.
Symbol
V_CEO
I_C
h_FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
[1] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.
Conditions
open base
V_CE = 10 V;
I_C = 50 mA
Min Typ Max Unit
-
-
180 V
-
-
1
A
[1] _{100 250 -}