PBHV8118T Datasheet, PDF (2/13 Pages) NXP Semiconductors – 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
PBHV8118T
180 V, 1 A NPN high-voltage low V_CEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
Simplified outline Graphic symbol
3
3
1
2
1
2
sym021
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
PBHV8118T
-
plastic surface-mounted package; 3 leads
4. Marking
Table 4. Marking codes
Type number
PBHV8118T
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking code^[1]
LZ*
Version
SOT23
PBHV8118T
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 7 May 2010
© NXP B.V. 2010. All rights reserved.
2 of 13