TDA8358J Datasheet, PDF (2/20 Pages) NXP Semiconductors – Full bridge vertical deflection output circuit in LVDMOS with east-west amplifier

Philips Semiconductors
Full bridge vertical deflection output circuit
in LVDMOS with east-west amplifier
Product specification
TDA8358J
FEATURES
• Few external components required
• High efficiency fully DC coupled vertical bridge output
circuit
• Vertical flyback switch with short rise and fall times
• Built-in guard circuit
• Thermal protection circuit
• Improved EMC performance due to differential inputs
• East-west output stage.
GENERAL DESCRIPTION
The TDA8358J is a power circuit for use in 90° and 110°
colour deflection systems for 25 to 200 Hz field
frequencies, and for 4 : 3 and 16 : 9 picture tubes. The IC
contains a vertical deflection output circuit, operating as a
high efficiency class G system. The full bridge output
circuit allows DC coupling of the deflection coil in
combination with single positive supply voltages.
The east-west output stage is able to supply the sink
current for a diode modulator circuit.
The IC is constructed in a Low Voltage DMOS (LVDMOS)
process that combines bipolar, CMOS and DMOS
devices. DMOS transistors are used in the output stage
because of absence of second breakdown.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
Supplies
V_P
V_FB
I_q(P)(av)
I_q(FB)(av)
P_EW
P_tot
supply voltage
flyback supply voltage
average quiescent supply current
average quiescent flyback supply current
east-west power dissipation
total power dissipation
Inputs and outputs
V_i(dif)(p-p)
I_o(p-p)
differential input voltage (peak-to-peak value)
output current (peak-to-peak value)
Flyback switch
I_o(peak)
maximum (peak) output current
East-west amplifier
V_o
V_I(bias)
I_o
output voltage
input bias voltage
output current
Thermal data; in accordance with IEC 747-1
T_stg
T_amb
T_j
storage temperature
ambient temperature
junction temperature
CONDITIONS MIN. TYP. MAX. UNIT
7.5 12
18
V
2V_P 45
66
V
during scan −
10
15
mA
during scan −
−
10
mA
−
−
4
W
−
−
15
W
−
1000 1500 mV
−
−
3.2 A
t ≤ 1.5 ms
−
−
±1.8 A
−
−
68
V
2
−
3.2 V
−
−
750 mA
−55 −
−25 −
−
−
+150 °C
+75 °C
150 °C
1999 Dec 22
2