PHN1011 Datasheet, PDF (2/7 Pages) NXP Semiconductors – TrenchMOS transistor Logic level FET

Philips Semiconductors
TrenchMOS™ transistor
Logic level FET
Product specification
PHN1011
ELECTRICAL CHARACTERISTICS
T_j= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_(BR)DSS
V_GS(TO)
R_DS(ON)
g_fs
I_GSS
I_DSS
Q_g(tot)
Q_gs
Q_gd
t_{d on}
t_r
t_{d off}
t_f
L_d
L_s
C_iss
C_oss
C_rss
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Forward transconductance
Gate source leakage current
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
V_GS = 0 V; I_D = 0.25 mA;
T_j = -55˚C
V_DS = V_GS; I_D = 1 mA
T_j = 150˚C
T_j = -55˚C
V_GS = 10 V; I_D = 10 A
V_GS = 5 V; I_D = 5 A
V_GS = 5 V; I_D = 5 A; T_j = 150˚C
V_DS = 25 V; I_D = 10 A
V_GS = ±5 V; V_DS = 0 V
V_DS = 25 V; V_GS = 0 V;
T_j = 150˚C
I_D = 25 A; V_DD = 15 V; V_GS = 5 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
V_DD = 15 V; I_D = 25 A;
V_GS = 10 V; R_G = 5 Ω
Resistive load
Internal drain inductance Drain leads to centre of die
Internal source inductance Source leads to source bond pad
Input capacitance
Output capacitance
Feedback capacitance
V_GS = 0 V; V_DS = 20 V; f = 1 MHz
MIN. TYP. MAX. UNIT
25 -
-
V
22 -
-
V
1 1.5 2
V
0.6 -
-
V
-
- 2.3 V
-
9 11 mΩ
- 11 13.5 mΩ
-
- 23 mΩ
12 36
-
S
- 10 100 nA
- 0.05 10 µA
-
- 500 µA
- 26 - nC
-
6
- nC
- 9.4 - nC
-
7 15 ns
- 50 75 ns
- 82 120 ns
- 59 75 ns
-
1
- nH
-
3
- nH
- 1700 - pF
- 475 - pF
- 300 - pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T_j = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
I_S
Continuous source current T_a = 25 ˚C, t_p ≤ 10 s
(body diode)
I_SM
Pulsed source current (body
diode)
V_SD
Diode forward voltage
I_F = 10 A; V_GS = 0 V
t_rr
Reverse recovery time
I_F = 10 A; -dI_F/dt = 100 A/µs;
Q_rr
Reverse recovery charge V_GS = 0 V; V_R = 25 V
MIN. TYP. MAX. UNIT
-
- 11 A
-
- 44 A
- 0.95 1.2 V
- 83 - ns
- 0.1 - µC
June 1999
2
Rev 1.100