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| BUK545-60H Datasheet, PDF (2/8 Pages) NXP Semiconductors – PowerMOS transistor Logic level FET | |||
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Philips Semiconductors
PowerMOS transistor
Logic level FET
Product specification
BUK545-60H
STATIC CHARACTERISTICS
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 1 mA
VDS = 60 V; VGS = 0 V; Tj = 25 ËC
VDS = 60 V; VGS = 0 V; Tj =125 ËC
VGS = ±15 V; VDS = 0 V
VGS = 5 V;
ID = 20 A
DYNAMIC CHARACTERISTICS
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
gfs
Forward transconductance
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
td on
Turn-on delay time
tr
Turn-on rise time
td off
Turn-off delay time
tf
Turn-off fall time
Ld
Internal drain inductance
Ls
Internal source inductance
CONDITIONS
VDS = 25 V; ID = 20 A
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 3 A;
VGS = 5 V; RGS = 50 â¦;
Rgen = 50 â¦
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN. TYP. MAX. UNIT
60
-
-
V
1.0 1.5 2.0 V
-
1
10 µA
-
0.1 1.0 mA
-
10 100 nA
-
25 38 mâ¦
MIN.
11
-
-
-
-
-
-
-
-
TYP.
20
1200
470
180
25
120
160
110
4.5
MAX.
-
1750
600
275
40
150
220
145
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
-
7.5
-
nH
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all R.H. ⤠65% ; clean and dustfree
three terminals to external
heatsink
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
1500 V
-
12
-
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
-
current
IDRM
Pulsed reverse drain current -
VSD
Diode forward voltage
IF = 21 A ; VGS = 0 V
trr
Reverse recovery time
IF = 21 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = 0 V; VR = 30 V
MIN. TYP. MAX. UNIT
-
-
21
A
-
-
84
A
-
0.9 2.0 V
-
60
-
ns
- 0.25 -
µC
August 1994
2
Rev 1.000
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