BUK116-50L Datasheet, PDF (2/13 Pages) NXP Semiconductors – Logic level TOPFET SMD version of BUK106-50L/S

Philips Semiconductors
Logic level TOPFET
SMD version of BUK106-50L/S
Product specification
BUK116-50L/S
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
Voltages
V_DSS
Continuous off-state drain source
voltage¹
V_IS = 0 V
V_IS
Continuous input voltage
-
V_FS
Continuous flag voltage
-
V_PS
Continuous supply voltage
-
Currents
V_IS =
I_D
Continuous drain current
T_mb ≤ 25 ˚C
I_D
Continuous drain current
T_mb ≤ 100 ˚C
I_DRM
Repetitive peak on-state drain current T_mb ≤ 25 ˚C
Thermal
P_tot
Total power dissipation
T_stg
T_j
Storage temperature
Junction temperature²
T_mb = 25 ˚C
-
continuous
T_sold
Lead temperature
during soldering
MIN.
-
0
0
0
-
-
-
-
-
-55
-
-
MAX.
50
11
11
11
85
50 45
31 28
200 180
125
150
150
250
UNIT
V
V
V
V
V
A
A
A
W
˚C
˚C
˚C
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply
connected, TOPFET can protect
itself from two types of overload -
over temperature and short circuit
load.
An n-MOS transistor turns on
between the input and source to
quickly discharge the power
MOSFET gate capacitance.
For internal overload protection to
remain latched while the control
circuit is high, external series input
resistance must be provided. Refer
to INPUT CHARACTERISTICS.
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
V_PSP
Protection supply voltage³
V_IS = 8 5
-
V
for valid protection
BUK116-50L 4.4 4
-
V
BUK116-50S 5.4 5
-
V
V_DDP(T)
V_DDP(P)
P_DSM
Over temperature protection
V_PS = V_PSN
Protected drain source supply voltage V_IS = 10 V; R_I ≥ 2 kΩ
V_IS = 5 V; R_I ≥ 1 kΩ
Short circuit load protection
V_PS = V_PSN; L ≤ 10 µH
Protected drain source supply voltage⁴ V_IS = 10 V; R_I ≥ 2 kΩ
V_IS = 5 V; R_I ≥ 1 kΩ
Instantaneous overload dissipation
-
50
V
-
50
V
-
24
V
-
45
V
-
4
kW
ESD LIMITING VALUE
SYMBOL PARAMETER
V_C
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
2
UNIT
kV
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher T_j is allowed as an overload condition but at the threshold T_j(TO) the over temperature trip operates to protect the switch.
3 The minimum supply voltage required for correct operation of the overload protection circuits.
4 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed V_DDP(P) maximum.
For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.
July 1996
2
Rev 1.000