TDA8001 Datasheet, PDF (17/24 Pages) NXP Semiconductors – Smart card interface

Philips Semiconductors
Smart card interface
Product specification
TDA8001
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V_IDLE
voltage on pin I/O outside a
session
Z_IDLE
impedance on pin I/O(µC)
outside a session
R_pu
internal pull-up resistance
between pin I/O and V_CC
t_r, t_f
rise and fall times
Protections
C_i = C_o = 30 pF
−
−
0.4
V
10
−
−
MΩ
8
10
12
kΩ
−
−
0.5
µs
T_sd
shut-down local temperature
−
135 −
°C
I_CC(sd)
shut-down current at V_CC
−
−150 −
mA
I_PP(sd)
shut-down current at V_PP
−
−75 −
mA
I_I/O(lim)
current limitation on pin I/O
from I/O to I/O(µC)
3
−
5
mA
Timing
t_act
activation sequence duration
see Fig.7
t_de
deactivation sequence duration see Fig.8
t₃
start of the window for sending
CLK to the card
t₅
end of the window for sending
CLK to the card
t_st
maximum pulse width on
CMDVCC before V_CC starts rising
−
110 −
µs
−
100 −
µs
−
−
70
µs
80
−
−
µs
−
−
30
µs
Notes
1. Pins CMDVCC, VPP21, VPP15, VPP12.5, CMD7, CMD3.5 and PRES are active LOW; pins RSTIN and PRES are
active HIGH.
2. The transition time and duty cycle definitions are shown in Fig.12; δ = -t-₁----t₊--¹---t--₂- .
3. P is the card programming voltage set by pin VPP12.5, VPP15 or VPP21.
4. The tests for dynamic response of both V_PP and V_CC are performed at 1 Hz, 10 kHz, 100 kHz and 1 MHz, with a
capacitive load of 100 nF.
5. This condition ensures proper starting of the oscillator with crystals having a series resistance up to 100 Ω.
handbook, full pagewidth
1996 Dec 12
tr
90%
tf
90%
10%
10%
t1
t2
Fig.12 Definition of transition times.
17
VOH
1.5 V
VOL
MBH856