TDA8004AT Datasheet, PDF (16/22 Pages) NXP Semiconductors – IC card interface

Philips Semiconductors
IC card interface
Product specification
TDA8004AT
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V_OH
HIGH-level output voltage
I_OH = −15 µA
Protections
T_sd
I_CC(sd)
shut-down temperature
shut-down current at V_CC
Timing
t_act
activation sequence duration
see Fig.5
t_de
deactivation sequence duration
see Fig.6
t₃
start of the window for sending CLK see Fig.5
to the card
t₅
end of the window for sending CLK see Fig.5
to the card
0.75V_DD −
−
V
−
135 −
°C
−
−
110
mA
−
180 220
µs
60
80 100
µs
−
−
130
µs
140
−
−
µs
Notes
1. To meet these specifications V_CC should be decoupled to CGND using two ceramic multilayer capacitors of low ESR
with values of either 100 nF or one 100 nF and one 220 nF.
2. The transition times and duty factor definitions are shown in Fig.9; δ = -t-₁----t₊--¹---t--₂-
3. PRES and CMDCC are active LOW; RSTIN and PRES are active HIGH; for CLKDIV1 and CLKDIV2 see Table 1.
tr
90%
tf
90%
10%
10%
t1
t2
VOH
(VOH + VOL)/2
VOL
FCE666
Fig.9 Definition of output transition times.
2004 May 10
16