TDA8003TS Datasheet, PDF (16/24 Pages) NXP Semiconductors – I2C-bus SIM card interface

Philips Semiconductors
I²C-bus SIM card interface
Product specification
TDA8003TS
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Pin V_CC
V_O
output voltage
inactive mode; I_O = 1 mA
active mode; 5 V card; no load
active mode; 3 V card; no load
active mode; with 200 nF capacitor;
including static load (up to 20 mA)
and dynamic current pulses;
I_max = 200 mA, f_max = 5 MHz;
duration <400 ns
5 V card; 40 nAs pulses
I_O
I_CC
SR
Pin I/O
3 V card; 24 nAs pulses
output current
inactive mode; pin V_CC short circuit
to ground
V_CC = 5 or 3 V; V_DD = 2.5 V
V_CC = 5 or 3 V; V_DD = 5.5 V
output current
V_CC short circuit to ground
slew rate on V_CC (rise and fall) C_L(max) = 300 nF
V_O
output voltage
inactive mode; I_O = 1 mA
I_O
output current
inactive mode; pin I/O short circuit
to ground
V_OL
LOW-level output voltage
I_OL = 1 mA
V_OH
HIGH-level output voltage
+25 < I_OH < −25 µA
V_IL
LOW-level input voltage
V_IH
HIGH-level input voltage
I_LIH
HIGH-level input leakage
current
I_IL
t_t(DI)
t_t(DO)
t_d
R_pu(int)
LOW-level input current
data input transition time
data output transition time
delay time on falling edge
internal pull-up resistance
between pins I/O and V_CC
C_L = 30 pF
C_L = 30 pF
C1 version
C2 version
Pin SIMI/O
V_OL
LOW-level output voltage
I_OL = 1 mA
V_OH
HIGH-level output voltage
with internal 20 kΩ pull-up resistor
to V_DDI; I_O = 10 µA
V_IL
LOW-level input voltage
V_IH
HIGH-level input voltage
I_LIH
HIGH-level input leakage
current
−
−
4.85
5.10
2.8
3.05
4.60
−
2.75
−
−
−
−
−
−
−
−
−
0.05
0.17
−
−
−
−
−0.2
−
0.8V_CC −
−0.3
−
1.5
−
−
−
−
−
−
−
−
−
−
−
8
−
13
−
−0.2
−
V_DDI − 0.3 −
−0.3
−
0.7V_DDI −
−
−
0.4
V
5.40
V
3.22
V
5.40
V
3.22
V
−1
mA
15
mA
40
mA
120
mA
0.25
V/µs
0.4
V
−1
mA
+0.4
V
V_CC + 0.2 V
+0.8
V
V_CC + 0.3 V
10
µA
−600
µA
1
µs
0.5
µs
500
ns
13
kΩ
18
kΩ
+0.3
V
V_DDI + 0.2 V
+0.3V_DDI V
V_DDI + 0.3 V
10
µA
2000 Apr 20
16