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TDA8003TS Datasheet, PDF (15/24 Pages) NXP Semiconductors – I2C-bus SIM card interface
◁
Philips Semiconductors
I2C-bus SIM card interface
Product specification
TDA8003TS
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Pin SDA (open-drain)
VIL
LOW-level input voltage
−0.3
−
VIH
HIGH-level input voltage
0.7VDDI −
ILH
HIGH-level leakage current
−
−
IIL
LOW-level input current
depends on the pull-up resistor
−
−
VOL
LOW-level output voltage
IOL = 3 mA
−
−
Pin SCL (open-drain)
VIL
LOW-level input voltage
VIH
HIGH-level input voltage
ILI
input leakage current
−0.3
−
0.7VDDI −
−
−
Pin SIMERR (100 kΩ pull-up resistor to VDDI)
VOL
LOW-level output voltage
IOL < 1 mA
VOH
HIGH-level output voltage
IOH < −1 µA
−
−
0.7VDDI −
Pins SAD0, SAD1 and PWROFF
VIL
LOW-level input voltage
VIH
HIGH-level input voltage
ILI
input leakage current
0
−
0.7VDDI −
−
−
Pin RST
VO
output voltage
IO
output current
inactive mode; IO = 1 mA
−0.3
−
inactive mode; pin RST short circuit −
−
to ground
VOL
LOW-level output voltage
IOL = 200 µA
VOH
HIGH-level output voltage
IOH < −200 µA
tf
fall time
CL = 30 pF
tr
rise time
CL = 30 pF
−0.2
−
VCC − 0.5 −
−
−
−
−
Pin CLK
VO
output voltage
IO
output current
inactive mode; IO = 1 mA
−0.3
−
inactive mode; pin CLK short circuit −
−
to ground
VOL
LOW-level output voltage
IOL = 200 µA
−0.2
−
VOH
HIGH-level output voltage
IOH = −200 µA
VCC − 0.5 −
tf
fall time
CL = 30 pF
−
−
tr
rise time
CL = 30 pF
−
−
fclk
clock frequency
1 MHz power-down configuration 1
−
regular activity
0
−
δ
duty factor
CL = 30 pF
45
−
+0.3VDDI V
6
V
1
µA
−
µA
0.3
V
+0.3VDDI V
6
V
1
µA
0.3VDDI V
−
V
0.3VDDI V
VDDI + 0.3 V
±1
µA
+0.4
V
−1
mA
+0.3
V
VCC + 0.2 V
0.5
µs
0.5
µs
+0.4
V
−1
mA
+0.3
V
VCC + 0.2 V
8
ns
8
ns
1.5
MHz
10
MHz
55
%
2000 Apr 20
15
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