TDA8003TS Datasheet, PDF (13/24 Pages) NXP Semiconductors – I2C-bus SIM card interface

Philips Semiconductors
I²C-bus SIM card interface
Product specification
TDA8003TS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
V_DDP
V_DDS
V_DDI
V_i(n)
power supply voltage
signal supply voltage
interface signal supply voltage
input voltage
on pins 1, 17, 21 and 24
on pins 15, 16, 22 and 23
on pins 19 and 20
on pins 9, 11 and 13
on pin 12
on pin 8
on pins 2, 4, 6 and 7
I_i(n)
DC input current
on pins 1, 17, 19, 20, 21, 22, 23 and 24
on pin 15
I_i/o(n)
DC input/output current
on pins 2, 4, 6, 7 and 8
on pin 16
I_i/o(17)
P_tot
T_j
T_stg
V_esd(n)
transient input/output current on pin 17
continuous total power dissipation
operating junction temperature
IC storage temperature
electrostatic discharge voltage
on pins 9, 11, 12, 13 and 16
on any other pin
CONDITIONS
MIN.
−0.5
−0.5
−0.5
−0.5
−0.5
−0.5
−0.5
−0.5
−0.5
−0.5
−5
−5
−40
−5
duration 1 ms
−40
T_amb = −40 to +85 °C −
−
−55
−6
−2
MAX.
+6.5
+6.5
+6.5
UNIT
V
V
V
+6.5
V
V_DDS + 0.5 V
+6.5
V
V_CC + 0.5 V
+6.5
V
+7.5
V
V_VUP + 0.5 V
+5
mA
+10
mA
+40
mA
+5
mA
+40
mA
230
mW
125
°C
+150
°C
+6
kV
+2
kV
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handle Metal Oxide Semiconductor (MOS) devices.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_th(j-a)
thermal resistance from junction to ambient in free air
VALUE
102
UNIT
K/W
2000 Apr 20
13